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Patent AT-E401606-T1: [Translated] SEMICONDUCTOR COMPONENT WITH MULTIPLE MEMORY STRUCTURES

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Updated Oct 29, 2026

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A structure and associated method of transfer data on a semiconductor device, comprising: a plurality of systems within the semiconductor device. Each system comprises at least one processing device and a local memory structure. Each processing device is electrically coupled to each local memory structure within each system. Each local memory structure is electrically coupled to each of the other said local memory structures. Each local memory structure is adapted to share address space with each of the processing devices. Each processing device is adapted to transmit data and instructions to each local memory structure.

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    Official Data Source

    Access the complete Patent AT-E401606-T1: [Translated] SEMICONDUCTOR COMPONENT WITH MULTIPLE MEMORY STRUCTURES on the official website.

    Modified Apr 29, 2026

Prototype by Datopian · not an official government website · data from data.virginia.gov